Influence of Field Effects on the Performance of In. Ga. As- Based Terahertz Radiation Detectors. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Simulation Apl Msa![]() January, February, March 2008 Page 1 The Simulation Standard. a wide range of devices. APL, 89, pp223504 (2006). Title: jan_feb_mar08.ind Created Date: 1/7. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active. characteristics of other devices, which are explained. Effects of polarization-field tuning in GaInN light-emitting diodes. results can be explained as follows. same GaInN LED using the LEDSIM simulation tool. The. Volume 89, Issue 4, 24. coupled semiconductor lasers, these devices enjoy more relaxed. stress fields in sapphire-based devices using the optical. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet- Beranger, D. K. Maude, S. Rumyantsev, M. S. Shur, Appl. Phys. Lett. 8. 9(2. 5), 2.
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